Integrated FEMs ease 2.4-GHz RF design
pSemi offers the PE566212 and PE566213 2.4-GHz SOI front-end modules (FEMs) for Bluetooth, Zigbee, and Thread applications. Each module integrates a power amplifier, low-noise amplifier, and RF switch in a compact 1.8×1.8×0.63-mm LGA package, simplifying RF design. Applications include smart home devices, wireless audio, wearables, and sensing systems.
The FEMs provide transmit output power up to +20 dBm, a receive noise figure of 1.8 dB at 13 dB of gain, and typical bypass-path loss of 0.8 dB. According to pSemi, the FEMs offer 5 to 10 times the range of a standalone SoC. Based on pSemi’s UltraCMOS+ SOI process, they offer a highly integrated silicon-based alternative to GaAs- and SiGe-based front ends.
The PE566212 supports Bluetooth Basic Data Rate (BDR) and Bluetooth Low Energy (BLE), with 22.5 dB of transmit digital gain control in 1.5-dB steps. The PE566213 adds Bluetooth Enhanced Data Rate (EDR) support at up to +11.5 dBm and offers 15 dB of transmit digital gain control in 1-dB steps. Applications include smart home devices, wireless audio, wearables, and sensing systems.
The front-end modules are available now, along with corresponding evaluation boards.
The post Integrated FEMs ease 2.4-GHz RF design appeared first on EDN.
