100-V GaN FETs lower switching FOM
Renesas Electronics has launched its first family of 100-V enhancement-mode (E-mode) discrete GaN power transistors. The company says the RTP100E005G1FL, RTP100E2P6G1FL, RTP100E1P8G1FL-DSC and RTP100E1P2G1FL-DSC low-voltage GaN FETs achieve industry-leading hard- and soft-switching figure-of-merit (FOM). They deliver up to 35% lower hard-switching FOM and up to 63% lower soft-switching FOM than comparable GaN devices.
Offered in FCLGA packages that maintain a silicon-compatible footprint, the GaN FETs let designers migrate from silicon MOSFET layouts without significant PCB rework. The RTP100E005G1FL and RTP100E2P6G1FL have typical on-resistance of 5 mΩ and 2.6 mΩ, respectively. The dual-side-cooled RTP100E1P8G1FL-DSC and RTP100E1P2G1FL-DSC have on-resistance of 1.8 mΩ and 1.2 mΩ, respectively. Depending on application requirements and power-conversion architecture, the transistors can achieve up to 40–70% lower switching losses and up to twice the power density at the system level.
The 100-V family targets high-power-density applications, including AI data centers, humanoid robotics, and factory automation. Package options and a wide range of on-resistance values allow the transistors to address different power levels and applications, including synchronous rectification, multiphase buck conversion, and industrial motor drives.
The new low-voltage GaN power transistors are available now, along with corresponding evaluation boards.
The post 100-V GaN FETs lower switching FOM appeared first on EDN.
