Space-ready GaN FET endures harsh radiation
EPC Space has announced the EPC7030MSH, a radiation-hardened 300-V GaN FET for high-voltage, high-power space applications. It supports front-end DC/DC converters in satellite power systems, power conversion for high-voltage distribution buses, and electric propulsion platforms requiring high-performance switching.
With a maximum RDS(on) of 35 mΩ and a typical gate charge of 25 nC (30 nC max), the EPC7030MSH delivers a continuous drain current of 50 A at 5 V and a single-pulse drain current of 150 A for 300 µs. According to EPC Space, these specifications place it among the highest-performing rad-hard FETs in its class.
The EPC7030MSH is rated for 300-V operation at a linear energy transfer (LET) of 63 MeV·cm²/mg and maintains single-event effect (SEE) immunity up to 250 V at an LET of 84.6 MeV·cm²/mg. It is also immune to total ionizing dose (TID) effects under both low and high dose rate conditions.
Engineering models of the EPC7030MSH cost $236 each in quantities of 500 units, while rad-hard space-qualified devices are priced at $349 each.
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