Rad-tolerant GaN converter powers space electronics
Microchip’s POL-05-20S-T GaN point-of-load converter delivers up to 20 A of continuous current to power FPGAs, MCUs, and other processing-intensive digital loads in space. The radiation-tolerant device uses GaN power HEMTs to achieve high efficiency and power density in a compact, lightweight form factor, helping engineers meet the size, power, and energy constraints of onboard processing systems.
A synchronous buck topology with current-mode control provides fast transient response and stable operation. The 4.75-V to 13.2-V input range and adjustable 0.7-V to 5-V output accommodate multiple power rails and system architectures.
The POL-05-20S-T’s electrical parameters are specified before and after irradiation up to 50 krad(Si), and its single-event effects (SEE) have been characterized up to a linear energy transfer (LET) of 43 MeV·cm²/mg. The converter operates at full load over a temperature range of −55°C to +100°C.
Housed in a 1.51×1.51×0.45-in. surface-mount package, the POL-05-20S-T is now available in production quantities.
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