GaN-on-Sic ISM amplifier boosts efficiency
Gallium Semiconductor offers its first ISM CW amplifier, the GTH2e-2425300P, operating from 2.4 GHz to 2.5 GHz with peak efficiency of 76% (pulsed). Measured data for the 300-W prematched GaN-on-SiC HEMT shows a drain efficiency of over 72% under continuous-wave operation.
The GTH2e-2425300P brings high levels of efficiency to a wide range of industrial, scientific, and medical (ISM); RF energy, and continuous-wave (CW) applications, including semiconductor plasma sources and microwave plasma chemical vapor deposition. Powered by a 50-V supply rail, the part has a small signal gain of 17 dB typical at saturated power. Drain source breakdown voltage is 150 V.
The GTH2e-2425300P comes in an ACP-800 4-lead air-cavity plastic package with a ceramic matrix composite (CMC) flange, enhancing reliability and thermal performance (0.67°C/W). This standard air-cavity package also simplifies integration into various RF systems.
A fixed-tune demonstration board is available for qualified customers. Contact sales@galliumsemi.com for pricing details and ordering information.
Find more datasheets on products like this one at Datasheets.com, searchable by category, part #, description, manufacturer, and more.
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