GaN FET package improves thermal performance
Transphorm continues to expand its GaN device packaging options with a TO-leaded topside-cooled (TOLT) housing for its 650-V SuperGaN FET. According to the company, the TP65H070G4RS is the first topside-cooled surface-mount GaN device in the JEDEC standard TOLT package.
With its reduced heat path, the TOLT package minimizes heat dissipation through the PCB. The thermal performance of TOLT is similar to that of a thermally robust TO-247 through-hole package, while offering the added benefit of efficient manufacturing processes enabled by SMD-based printed circuit board assembly.
The TP65H070G4RS is a normally off D-mode device that combines a high-voltage GaN HEMT and a low-voltage silicon MOSFET. In addition to improved thermals, the part offers low gate charge, output capacitance, crossover loss, reverse recovery charge, and dynamic resistance. It provides a maximum on-resistance of 72 mΩ typical, total gate charge of 9 nC, and a temperature coefficient of resistance that is 20% lower than normally off E-mode GaN devices.
The TP65H070G4RS SuperGaN device in the TOLT package is currently available to sample. To submit a sample request, click here.
Find more datasheets on products like this one at Datasheets.com, searchable by category, part #, description, manufacturer, and more.
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