GaN die power custom MMICs
Guerrilla RF’s GRF0020D and GRF0030D GaN-on-SiC HEMT power amplifiers deliver up to 50 W of saturated power. Available as bare die, these discrete transistors are intended for wireless infrastructure, military, aerospace, and industrial heating applications, supporting integration into custom MMICs.
Each device operates from either 50-V or 28-V supply rails, covering multiple octaves of operational bandwidth for continuous wave, linear, and pulsed modulation. When using a 50-V rail, the GRF0030D delivers 50 W (PSAT) from DC to 6 GHz, with gain ranging from 13.5 dB to 23.7 dB. At 28 V, it provides up to 27.5 W of saturated output power.
The GRF0020D offers up to 30 W at 50 V and 19 W at 28 V. This lower-power HEMT supports frequencies up to 7 GHz and provides gain between 13.8 dB and 24.3 dB.
The GRF0020D and GRF0030D are 100% DC production tested to ensure known good die (KGD) compliance. They are available for order, with samples ready for distribution. Prices start at $30 each for quantities of 100 units.
Find more datasheets on products like this one at Datasheets.com, searchable by category, part #, description, manufacturer, and more.
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