AOS boosts power density with 600-V MOSFETs
Two 600-V MOSFETs from AOS come in top-side-cooled packages with co-optimized electrical and thermal paths to maximize power density. The AOGT037V60DE2 and AOGT060V60DE2 αMOS E2 Super Junction MOSFETs feature a built-in fast body diode for enhanced robustness and reduced Qrr in high-stress applications.
The AOGT037V60DE2 has a maximum RDS(ON) of 37 mΩ and typical Qg of 146 nC, both at a VGS of 10 V. For the AOGT060V60DE2, the corresponding ratings are 60 mΩ and 85 nC under the same conditions. Both devices provide strong avalanche capability and in-rush current handling with a wide safe operating area (SOA).
AOS combines the αMOS E2 silicon with its GTPAK package to improve thermal performance through a top-side cooling pad, while gull-wing leads enhance board-level reliability. The MOSFETs are designed to prevent self-turn-on for reliable operation under dynamic conditions. Typical applications include rectifiers, solar inverters, motor drives, and industrial power systems using boost PFC, totem-pole PFC, LLC resonant, PSFB, and cyclo-converter topologies.
The AOGT037V60DE2 (600 V, 37 mΩ) and AOGT060V60DE2 (600 V, 60 mΩ) are now available in production quantities with a lead time of 16 weeks. Respective prices are $6 and $3 in quantities of 1000 units.
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