650-V GaN HEMT resides in TOLL package
Rohm Semiconductor introduced the GNP2070TD-Z, a 650-V enhancement-mode GaN HEMT in a TO-leadless (TOLL) package. With dimensions of 11.68×9.9×2.4 mm, this compact package enhances heat dissipation, supports high current, and enables strong switching performance.
The GNP2070TD-Z integrates second-generation GaN-on-Si technology, achieving an RDS(on) of 70 mΩ and a Qg of 5.2 nC. With a VDS of 650 V and an IDS of 27 A, the transistor is well-suited for power supplies, AC adapters, PV inverters, and energy storage systems.
For this launch, ROHM has outsourced package manufacturing to ATX Semiconductor, with TSMC handling front-end processes and ATX managing back-end processes. ROHM also plans to collaborate with ATX on automotive-grade GaN devices.
The EcoGaN HEMTs will be available starting in March from DigiKey, Mouser, and Farnell.
Find more datasheets on products like this one at Datasheets.com, searchable by category, part #, description, manufacturer, and more.
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