SiC MOSFETs trim on-resistance and gate losses

Infineon’s 750-V CoolSiC G2 MOSFETs enhance system efficiency and power density in automotive and industrial power conversion. The second-generation G2 technology provides typical on-resistance values up to 60 mΩ, supporting a wide range of applications such as onboard chargers, DC/DC converters, xEV auxiliaries, and solar inverters. A best-in-class RDS(on) of 4 mΩ is available in the top-side cooled Q-DPAK package, which delivers strong thermal performance and reliability.

G2 technology also offers low RDS(on) × Qoss and RDS(on) × Qfr values, reducing switching losses in both hard- and soft-switching topologies, with strong efficiency in hard-switching use cases. Lower gate charge enables faster switching and reduces gate drive losses, improving performance in high-frequency applications.

The 750-V MOSFETs provide a high VGS(th) of 4.5 V and a low QGD/QGS ratio, enhancing protection against parasitic turn-on. They also support gate voltages down to -11 V, offering extended design margins and improved compatibility with other devices.

Samples of the 750-V CoolSiC G2 MOSFETs in Q-DPAK packages, with RDS(on) values of 4 mΩ, 7 mΩ, 16 mΩ, 25 mΩ, and 60 mΩ, are now available for order. For more information, click here.

Infineon Technologies 

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