SiC modules raise power density for AI servers

QSiC Dual3 1200-V half-bridge MOSFET modules from SemiQ address the efficiency and thermal demands of liquid-cooled AI data centers. Two of the series’ six devices offer an R_DS(on) of just 1 mΩ and achieve a power density of 240 W/in.³ in a 62×152-mm package. The modules are available with or without a parallel Schottky barrier diode to further reduce switching losses in high-temperature environments.

QSiC Dual3 is designed to replace silicon IGBT modules with minimal redesign, reducing both size and weight while maintaining efficiency. All SiC MOSFET die are screened using wafer-level gate-oxide burn-in tests exceeding 1350 V. The modules also feature low junction-to-case thermal resistance, enabling the use of smaller, lighter heatsinks.

The Dual3 lineup includes the following part numbers:

Rated for junction temperatures from −40°C to +175°C, the QSiC modules are also suited for grid converters in energy storage systems, industrial motor drives, uninterruptible power supplies, and EV applications.

Learn more about the QSiC Dual3 modules here.

SemiQ

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