MRAM macro speeds read/write operations
Renesas presented an embedded MRAM macro in an MCU test chip at ISSCC 2024 that delivers a random-read access frequency of over 200 MHz. The test chip also exhibited a write throughput of 10.4-Mbytes/s.
The company developed two high-speed circuit technologies to achieve faster read and write operations in spin-transfer torque magnetoresistive RAM (STT-MRAM). A prototype MCU test chip, fabricated using a 22-nm process, combined the two technologies with a 10.8-Mbit MRAM memory cell array. Evaluation of the prototype chip confirmed the high-speed results at a maximum junction temperature of 125°C.
Advancements in read technology have enabled Renesas to achieve what it claims is the world’s fastest random read access time of 4.2 ns. Even taking into consideration the setup time of the interface circuit that receives the MRAM output data, the company was able to realize random read operation at frequencies in excess of 200 MHz. Further, improved write technology can improve MRAM write throughput 1.8-fold.
For greater detail, read the complete press release here.
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