Isolated driver enables fast, stable GaN control
Rohm has introduced the BM6GD11BFJ-LB, an isolated gate driver optimized for 600-V-class GaN HEMTs in industrial equipment such as motors and server power supplies. When paired with GaN transistors, the single-channel driver maintains stable operation under high-frequency, high-speed switching conditions.
The device ensures safe signal transmission by galvanically isolating the control circuitry during switching events with fast voltage rise and fall times. Its 4.5-V to 6.0-V gate drive range and 2500-Vrms isolation rating support a broad selection of high-voltage GaN devices, including Rohm’s 650-V EcoGaN HEMT. Low output-side current consumption—0.5 mA maximum—helps reduce standby power and improve overall system efficiency.
The BM6GD11BFJ-LB uses proprietary on-chip isolation to reduce parasitic capacitance, enabling high-frequency operation up to 2 MHz and reducing external component count. Enhanced CMTI of 150 V/ns—reportedly 1.5× higher than conventional products—prevents malfunctions during fast GaN switching. A reduced minimum pulse width of 65 ns improves duty cycle control, allowing stable, efficient operation at higher frequencies.
The BM6GD11BFJ-LB isolated gate driver is now available through online distributors including DigiKey and Mouser. Samples are priced at $4 each.
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