Infineon hones SiC MOSFET trench technology
Infineon’s 650-V and 1200-V CoolSiC G2 MOSFETs improve stored energy and charges by up to 20% compared to the previous generation. This second generation of CoolSiC trench MOSFETs continues to harness the performance attributes of silicon carbide, facilitating reduced energy loss and higher efficiency during power conversion.
CoolSiC G2 includes improvements in key figures-of-merit for both hard-switching operation and soft-switching topologies. The fast switching capability of these devices is increased by more than 30%, and thermal capability is now 12% better than the previous devices.
The large portfolio of CoolSiC G2 MOSFETs is suitable for all common combinations of AC/DC, DC/DC, and DC/AC stages. These low on-resistance SiC MOSFETs can be used in photovoltaic inverters, energy storage systems, EV charging, power supplies, and motor drives.
Datasheets and purchase information for CoolSic G2 MOSFETs can be accessed via the product page link below.
Find more datasheets on products like this one at Datasheets.com, searchable by category, part #, description, manufacturer, and more.
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