GaN transistors drive long-pulse radar
Ampleon has launched four 700-W GaN-on-SiC RF transistors for S-band radar systems, operating between 2.7 GHz and 3.5 GHz. The CLS3H2731 and CLS3H3135 series leverage a radar-optimized GaN-on-SiC platform that combines frequency-specific design, long-pulse support, and robust thermal performance—features beyond standard GaN transistors.
The transistors span two frequency ranges: 2.7 GHz to 3.1 GHz and 3.1 GHz to 3.5 GHz. Devices in each range are offered in flanged (SOT502A) and leadless ceramic (SOT502B) packages to meet diverse mechanical and thermal requirements. The lineup includes:
- CLS3H2731L-700 (SOT502A, 2.7–3.1 GHz)
- CLS3H2731LS-700 (SOT502B, 2.7–3.1 GHz)
- CLS3H3135L-700 (SOT502A, 3.1–3.5 GHz)
- CLS3H3135LS-700 (SOT502B, 3.1–3.5 GHz)
Internally pre- and post-matched, the transistors offer high input impedance and support pulse lengths up to 300 µs with duty cycles of 10–20%. Low thermal resistance ensures reliable operation under high duty cycles. Designed for advanced radar transmitters, they are well-suited for air traffic control, ground and naval defense, weather monitoring, surveillance, and particle acceleration.
Now in mass production, the RF transistors are available through Ampleon’s global distributors, including DigiKey and Mouser.
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