Dry film photoresist enables fine circuit formation
Asahi Kasei has developed the Sunfort TA series of dry film photoresist for next-generation semiconductor packages requiring circuit patterns with line/space widths of 2/2 µm or less. The film offers high resolution with conventional stepper and laser direct imaging (LDI) systems—used to transfer circuit patterns onto substrates—enhancing precision in back-end processes.
The TA series supports fine wiring formation in panel-level packages and related applications. It enables patterning with a 1.0-µm resist width using LDI exposure in a 4-µm pitch design, as required for redistribution layer (RDL) formation (Figures a and b). The resulting fine resist pattern can be plated by a semi-additive process, then stripped to yield a 3-µm wide plating pattern within the same 4-µm pitch (Figure c).
Asahi Kasei states that Sunfort dry film photoresist will remain integral to advancing panel-level packaging technology as panel sizes increase. With its ability to achieve finer wiring and improve production efficiency, the TA series addresses the rising demand for advanced semiconductor package substrates and interposers in AI, automotive, communications, and IoT markets.
The post Dry film photoresist enables fine circuit formation appeared first on EDN.
