Memory platform tackles AI bottlenecks
NEO.AI is a memory platform from NEO Semiconductor that overcomes SRAM and DRAM scaling limitations in AI memory systems. As part of the platform launch, NEO Semiconductor is introducing its X-SRAM technology for on-chip memory in GPUs and AI processors and reporting its latest progress on 3D X-DRAM, a high-capacity memory technology for HBM.
By replacing conventional six-transistor SRAM with a two-transistor architecture, X-SRAM enables up to 5 times higher memory density to support 1–2 GB of on-chip memory, according to NEO. The technology maintains SRAM-class performance and is compatible with advanced nanosheet CMOS processes. It also provides a path toward future monolithic 3D X-SRAM implementations.
Built on 3D NAND manufacturing processes, 3D X-DRAM delivers up to 10 times higher memory capacity than conventional DRAM, according to NEO. Successful proof-of-concept validation demonstrates its potential as a scalable and manufacturable solution for next-generation HBM.
For more information, visit the NEO X-SRAM webpage.
The post Memory platform tackles AI bottlenecks appeared first on EDN.
