GaN transistor cuts losses and heat
EPC’s first Gen 7 eGaN power transistor, the 40-V EPC2366, delivers up to 3× better performance than equivalent silicon MOSFETs. Now entering mass production, the device features a typical RDS(ON) of 0.84 mΩ and an optimized RDS(ON) × QG figure of merit of 12.6 mΩ·nC. This enables the EPC2366 to reduce conduction and switching losses while improving thermal performance.
Designed for high-efficiency, high-density power systems, the EPC2366 is suitable for synchronous rectifiers, DC/DC converters, AI server power supplies, and motor drives. It is rated for a drain-to-source voltage (VDS) up to 40 V, transient voltages up to 48 V, and a continuous drain current (ID) of 88 A, with pulsed currents reaching 360 A.
To assist design-in and evaluation, the EPC90167 half-bridge development board integrates two EPC2366 transistors in a low-parasitic layout, with PWM drive signals and flexible input modes.
The EPC2366 comes in a compact 3.3×2.6-mm PQFN package and is priced at $1.56 each in quantities of 3000 units. The EPC90167 development board is available for $211.65 each.
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