GaN RF switch delivers 20 W
Built on a wide-bandgap GaN HEMT process, Teledyne’s TDSW84230EP reflective SPDT switch covers 30 MHz to 5 GHz, handling 20 W of continuous power. It is intended to replace PIN diode-based RF switches commonly used in the RF front ends of tactical and military communication radios.
The TDSW84230EP tolerates up to 900 mA/mm of saturation current, leveraging GaN’s high breakdown voltage and carrier density. Encased in a compact 3×3×0.8-mm, 16-pin QFN package, it offers 0.2-dB insertion loss and 45-dB port isolation, providing enhanced efficiency and saving board space over PIN diode architectures.
Qualified for operation over the military temperature range of -55°C to +125°C, the TDSW84230EP requires a positive supply voltage of 2.6 V to 5.25 V. Its internal charge pump is disabled to eliminate charge pump spurs in low-noise applications, while a -18-V supply is needed on the VCP pin.
The TDSW84230EP GaN RF switch is available now in commercial versions from Teledyne HiRel and authorized distributors.
Find more datasheets on products like this one at Datasheets.com, searchable by category, part #, description, manufacturer, and more.
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