200-V MOSFETs offer high-efficiency design
iDEAL Semiconductor has announced its first family of 200-V MOSFETs based on high-performance SuperQ technology. The SuperQ architecture increases silicon utilization from 50% to 95%, increasing efficiency, reducing energy losses, and improving cost-performance. It also preserves silicon’s core advantages: ruggedness, high-volume manufacturability, and reliability up to 175 °C.
Now in mass production, the iS20M028S1P is a 25‑mΩ N‑channel MOSFET in a TO‑220 package. It offers a wide safe operating area and high current capability, handling continuous currents up to 40 A. All units are 100% UIS tested in production to ensure reliability. Low switching losses improve efficiency, while a 26.5-nC gate charge and +0.5-V gate-threshold variation make paralleling simpler.
Devices with the lowest resistance, available for sampling in TOLL and D2PAK‑7L packages, achieve a maximum on-resistance of just 5.5 mΩ—1.2× lower than the current market leader and 1.7× lower than the next-best competitor, according to iDEAL.
Applications for the 200‑V SuperQ family include motor drives, LED lighting, battery protection circuits, AI servers, isolated DC/DC power modules, USB‑PD adapters, and solar power systems.
Datasheets and a full list of available part numbers, including the sampling devices, can be found here.
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