Vertical GaN advances efficiency and power density
onsemi has developed power semiconductors based on a vertical GaN (vGaN) architecture that improves efficiency, power density, and ruggedness. These GaN-on-GaN devices conduct current vertically through the semiconductor, supporting higher operating voltages and faster switching frequencies.
Most commercially available GaN devices are built on silicon or sapphire substrates, which conduct current laterally. onsemi’s GaN-on-GaN technology enables vertical current flow in a monolithic die, handling voltages up to and beyond 1200 V while delivering higher power density, better thermal stability, and robust performance under extreme conditions. Compared with lateral GaN semiconductors, vGaN devices are roughly three times smaller.
These advantages translate to significant system-level benefits. High-end power systems using vGaN can cut energy and heat losses by nearly 50%, while reducing size and weight. The technology enables smaller, lighter, and more efficient systems for AI data centers, electric vehicles, and other electrification applications.
onsemi is now sampling 700-V and 1200-V vGaN devices to early access customers. For additional information about vertical GaN, click here.
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