TOLL-packaged SiC MOSFETs cut size, losses
Three 650-V SiC MOSFETs from Toshiba come in compact surface-mount TOLL packages, boosting both power density and efficiency. The 9.9×11.68×2.3-mm package shrinks volume by more than 80% compared to through-hole TO-247 and TO-247-4L(X) types.
TOLL also provides lower parasitic impedance, reducing switching losses. As a 4-terminal package, it enables a Kelvin source connection for the gate drive, minimizing the impact of package inductance and supporting high-speed switching. For the TW048U65C 650-V SiC MOSFET, turn-on and turn-off losses are about 55% and 25% lower, respectively, than the same Toshiba products in the TO-247 package without Kelvin connection.
The third-generation MOSFETs in this launch target switch-mode power supplies in servers, communication gear, and data centers. They are also suited for EV charging stations, photovoltaic inverters, and UPS equipment.
Datasheets and device availability are accessible via the product page links below.
Toshiba Electronic Devices & Storage
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