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SiC MOSFET relay switches up to 3300 V

The G3VH SiC MOSFET relay from Aratas America supports high-voltage switching applications requiring load voltages of 1800 V or 3300 V. SiC MOSFET technology enables high-voltage switching with low leakage current and fast switching while minimizing power loss and heat generation.

The G3VH relay is well suited for semiconductor test equipment, battery management systems, measuring instruments, and other applications demanding precise, high-voltage switching. Available in a 6-pin DIP with either board-mount or surface-mount terminals, the device contributes to equipment miniaturization.

The 1800-V and 3300-V versions support continuous load currents of 30 mA and 300 mA, respectively, with maximum leakage currents of 10 µA and 1 µA when the relay is open. Maximum turn-on times are 1 ms for the 1800-V version and 2 ms for the 3300-V version, while turn-off time is 0.2 ms for both versions. On-resistance is 200 Ω for the 1800-V version and 5 Ω for the 3300-V version. These specifications are measured at an input current (IF) of 10 mA and the respective continuous load current, with the load current applied for less than 1 s.

G3VH relays are available from authorized distributors, including Arrow Electronics, Newark, and Mouser.

G3VH product page 

Aratas America 

The post SiC MOSFET relay switches up to 3300 V appeared first on EDN.

27 August 2026
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