• Become a member
  • Log In
The Institution of Electronics
  • Home
  • About us
    • Our Objectives
    • Our History
    • Governance of the Institution
  • The Electron Magazine
    • 2024
      • 2024 – Winter
      • 2024 – Spring
      • 2024 – Summer
      • 2024 – Autumn
    • 2025
      • 2025 – Winter
      • 2025 – Spring
      • 2025 – Summer
      • 2025 – Autumn
    • 2026
      • 2026 – Winter
      • 2026 – Summer
  • Members
    • Membership Grades and Fees
    • Members’ Resources
      • The Electron Newsletter
      • The Archives
  • Education and Projects
    • National Electronics Competition
    • Student Members’ Projects
    • Arkwright Engineering Scholarships
  • News
  • Contact Us
  • Menu Menu
Uncategorised

SiC MOSFET relay switches up to 3300 V

The G3VH SiC MOSFET relay from Aratas America supports high-voltage switching applications requiring load voltages of 1800 V or 3300 V. SiC MOSFET technology enables high-voltage switching with low leakage current and fast switching while minimizing power loss and heat generation.

The G3VH relay is well suited for semiconductor test equipment, battery management systems, measuring instruments, and other applications demanding precise, high-voltage switching. Available in a 6-pin DIP with either board-mount or surface-mount terminals, the device contributes to equipment miniaturization.

The 1800-V and 3300-V versions support continuous load currents of 30 mA and 300 mA, respectively, with maximum leakage currents of 10 µA and 1 µA when the relay is open. Maximum turn-on times are 1 ms for the 1800-V version and 2 ms for the 3300-V version, while turn-off time is 0.2 ms for both versions. On-resistance is 200 Ω for the 1800-V version and 5 Ω for the 3300-V version. These specifications are measured at an input current (IF) of 10 mA and the respective continuous load current, with the load current applied for less than 1 s.

G3VH relays are available from authorized distributors, including Arrow Electronics, Newark, and Mouser.

G3VH product page 

Aratas America 

The post SiC MOSFET relay switches up to 3300 V appeared first on EDN.

27 August 2026
http://institutionofelectronics.ac.uk/wp-content/uploads/2022/12/IOE_LOGO.png 0 0 whdsolutions http://institutionofelectronics.ac.uk/wp-content/uploads/2022/12/IOE_LOGO.png whdsolutions2026-08-27 01:09:382026-08-27 01:09:38SiC MOSFET relay switches up to 3300 V

Latest news

  • Semtech expands LoRa Plus transceiver lineup27 August 2026 - 01:09
  • Morse Micro simplifies Wi-Fi HaLow integration27 August 2026 - 01:09
  • eFuse protects 48-V power lines27 August 2026 - 01:09
  • Advantech brings 100-TOPS AI to vision systems27 August 2026 - 01:09
  • SiC MOSFET relay switches up to 3300 V27 August 2026 - 01:09
  • DPOT push up/down26 August 2026 - 13:59
  • A 4-step guide to selecting PFC conduction mode: CrM/DCM vs. CCM26 August 2026 - 09:57
  • Apple’s processor cadence: A pending stutter-step for improved long-term edge inference?26 August 2026 - 05:52
  • Comparing multi-channel RF transceiver options for space applications25 August 2026 - 13:34
  • Hardware security verification must go beyond functional testing25 August 2026 - 10:31
IOE LOGO 2

Become a member

click here

Become a member

click here

Become a subscriber

click here

Become a sponsor

click here

© Copyright - The Institution of Electronics | Website by WHD Solutions
  • Link to LinkedIn
  • Link to Facebook
  • Link to X
Link to: DPOT push up/down Link to: DPOT push up/down DPOT push up/down Link to: Advantech brings 100-TOPS AI to vision systems Link to: Advantech brings 100-TOPS AI to vision systems Advantech brings 100-TOPS AI to vision systems
Scroll to top Scroll to top Scroll to top