SiC modules meet diverse power requirements
SemiQ’s 1200-V SiC MOSFETs can be copackaged with or without a 1200-V SiC Schottky barrier diode (SBD) in SOT-227 packages. The QSiC modules provide a breakdown voltage of >1400 V and low on-resistance shift over the full operating temperature range of -55°C to +175°C. They are offered in 20-mΩ, 40-mΩ, and 80-mΩ SiC MOSFET categories.
Target markets for the copackaged SiC modules include EV charging, on-board chargers, energy storage systems, solar and wind energy, and many other automotive, industrial, and medical power applications. All of the modules are tested at wafer-level gate burn-in to provide high-quality gate oxide with stable gate threshold voltage.
In addition to the burn-in test, which helps to stabilize the extrinsic failure rate, stress tests—such as gate stress, high-temperature reverse bias (HTRB) drain stress, and high humidity, high voltage, high temperature (H3TRB)— ensure requisite industrial-grade quality levels.
Follow the product page link below to access datasheets and to request samples or volume pricing.
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