SiC diodes boost isolation and efficiency
Three Gen 3 SiC Schottky diodes from Vishay come in low-profile SlimSMA HV (DO-221AC) packages with a minimum creepage distance of 3.2 mm. The 1200-V/1- A VS-3C01EJ12-M3, 650-V/2-A VS-3C02EJ07-M3, and 1200-V/2-A VS-3C02EJ12-M3 use a merged PIN Schottky structure that supports high-speed operation. They combine low capacitive charge with temperature-stable switching behavior, helping improve efficiency in hard-switching power designs.
In high-voltage applications, the diodes’ extended creepage distance enhances electrical isolation. Their SlimSMA HV package uses a molding compound with a CTI of ≥600 for strong insulation. The package also has a low profile of just 0.95 mm—significantly thinner than the 2.3 mm height of standard SMA and SMB packages with a similar footprint.
All three diodes operate reliably up to +175°C and feature negligible reverse recovery, making them well-suited for bootstrap, anti-parallel, and PFC circuits in DC/DC and AC/DC converters used in server power supplies, energy systems, and industrial drives.
Samples and production quantities of the Gen 3 SiC diodes are available now, with lead times of 14 weeks.
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