Infineon develops 300-mm GaN technology
Infineon has introduced 300-mm power GaN wafer technology within a scalable, high-volume manufacturing environment. The company notes that 300-mm wafers offer significant technological and efficiency advantages over 200-mm wafers, producing 2.3 times more chips per wafer due to the larger diameter.
Infineon manufactured 300-mm GaN wafers on an integrated pilot line in its existing 300-mm silicon production facility in Villach, Austria. The company is drawing on its expertise in 300-mm silicon and 200-mm GaN production and plans to scale GaN capacity according to market demand.
A key advantage of 300-mm GaN technology is its compatibility with existing 300-mm silicon manufacturing equipment, as the production processes for gallium nitride and silicon are quite similar. Once fully scaled, 300-mm GaN production is expected to achieve cost parity with silicon at the RDS(on) level, enabling comparable costs between Si and GaN products.
Infineon will present its 300-mm GaN wafers at the electronica trade show in November 2024 in Munich, Germany.
Find more datasheets on products like this one at Datasheets.com, searchable by category, part #, description, manufacturer, and more.
googletag.cmd.push(function() { googletag.display(‘div-gpt-ad-native’); });
–>
The post Infineon develops 300-mm GaN technology appeared first on EDN.
