Gate driver enables flexible EV inverter design

The STGAP4S galvanically isolated automotive gate driver from ST connects to an external MOSFET-based push-pull buffer to scale gate current capability. This architecture enables control of inverters with varying power ratings, including high-power designs with multiple parallel power switches.

The STGAP4S can deliver gate drive currents in the tens of amperes using small external MOSFETs and handles operating voltages up to 1200 V. It integrates an ADC, a flyback controller, programmable protections, and comprehensive diagnostics. The device is AEC-Q100 and ISO 26262 qualified, supporting system designs up to ASIL D.

Advanced diagnostics in the STGAP4S include self-checks for connections, gate-drive voltages, and internal circuitry such as desaturation and overcurrent detection. Faults are reported via SPI and two diagnostic pins. Protections like active Miller clamping, UVLO, OVLO, desaturation, overcurrent, and over-temperature detection ensure robust designs. Configurable thresholds, deadtime, and deglitch filters—programmable through SPI—enable flexibility while meeting ISO 26262 up to ASIL D.

Now in production, the STGAP4S is available in a SO-36W wide-body DIP, priced from $4.66 each in lots of 1000 units.

STGAP4S product page

STMicroelectronics

The post Gate driver enables flexible EV inverter design appeared first on EDN.