Dual SiC MOSFET handles 2200 V
Toshiba has begun volume shipping of the MG250YD2YMS3, a dual SiC MOSFET module with a drain-source voltage rating of 2200 V for use in industrial equipment. Intended for 1500-VDC applications, such as photovoltaic power systems and energy storage systems, the module provides a continuous drain current of 250 A (500 A pulsed) and can operate at channel temperatures up to 150°C.
The MG250YD2YMS3 offers low conduction loss with a low drain-source on-voltage (sense) of 0.7 V typical. It also has turn-on and turn-off switching loss of 14 mJ and 11 mJ, respectively. These characteristics contribute to higher equipment efficiency. Low switching loss also allows a conventional three-level circuit to be replaced with a two-level circuit with a lower module count, which helps to downsize industrial equipment.
Key specifications for the MG250YD2YMS3 include:
Use the product page link below to access the datasheet for the MG250YD2YMS3 dual SiC MOSFET module.
Toshiba Electronic Devices & Storage
Find more datasheets on products like this one at Datasheets.com, searchable by category, part #, description, manufacturer, and more.
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