• Become a member
  • Log In
The Institution of Electronics
  • Home
  • About us
    • Our Objectives
    • Our History
    • Governance of the Institution
  • The Electron Magazine
    • 2024
      • 2024 – Winter
      • 2024 – Spring
      • 2024 – Summer
      • 2024 – Autumn
    • 2025
      • 2025 – Winter
      • 2025 – Spring
      • 2025 – Summer
      • 2025 – Autumn
    • 2026
      • 2026 – Winter
      • 2026 – Spring
  • Members
    • Membership Grades and Fees
    • Members’ Resources
      • The Electron Newsletter
      • The Archives
  • Education and Projects
    • National Electronics Competition
    • Student Members’ Projects
    • Arkwright Engineering Scholarships
  • News
  • Contact Us
  • Menu Menu
Uncategorised

Buck-boost MOSFET meets USB PD 3.1 demands

Occupying a small footprint to ease PCB design, the AONZ66412 MOSFET from Alpha & Omega targets buck-boost converters in USB PD 3.1 EPR applications. While the 3.1 Extended Power Range specification enables power delivery up to 240 W over a USB Type-C cable and connector, the AONZ66412 addresses the most commonly used power range of up to 140 W at 28 V.

The AONZ66412 combines two 40-V N-channel MOSFETs arranged in a half-bridge configuration within a symmetric XSPairFET 5×6-mm package. When used to replace two single 5×6-mm DFN packages, the compact AONZ66412 reduces PCB area, improves efficiency, and simplifies the layout of a 4-switch buck-boost architecture.

Alpha & Omega’s XSPairFET DFN is a bottom-side source package. Each high-side and low-side MOSFET provides a maximum on-resistance of 3.8 mΩ. The source of the low-side MOSFET is directly linked to a large paddle on the lead frame. This setup enhances thermal performance by enabling direct connection of the paddle to the PCB’s ground plane. When tested, the AONZ66412 demonstrated 97% efficiency at 1 MHz under typical USB PD 3.1 EPR conditions with a 28-V input, 17.6-V output, and 8-A load.

The AONZ66412 dual MOSFET costs $1.56 each in lots of 1000 units. It is available now in production quantities with a lead time of 16 weeks.

AONZ66412 product page

Alpha & Omega Semiconductor 

Find more datasheets on products like this one at Datasheets.com, searchable by category, part #, description, manufacturer, and more.

<!–
googletag.cmd.push(function() { googletag.display(‘div-gpt-ad-native’); });
–>

The post Buck-boost MOSFET meets USB PD 3.1 demands appeared first on EDN.

28 March 2024
http://institutionofelectronics.ac.uk/wp-content/uploads/2022/12/IOE_LOGO.png 0 0 http://institutionofelectronics.ac.uk/wp-content/uploads/2022/12/IOE_LOGO.png 2024-03-28 19:18:112024-03-28 19:18:11Buck-boost MOSFET meets USB PD 3.1 demands

Latest news

  • Secrets of Oscilloscope Time Measurements14 August 2026 - 13:44
  • Radon: Level detection, risk determination, and as-needed mitigation13 August 2026 - 13:16
  • TI a first mover in CAN XL transceivers13 August 2026 - 10:13
  • Four-channel USB-UART IC boosts server management13 August 2026 - 05:08
  • eFuse speeds overcurrent detection13 August 2026 - 05:08
  • Memory platform tackles AI bottlenecks13 August 2026 - 05:08
  • 6.5-kV SiC MOSFET reaches 8-kV blocking13 August 2026 - 05:08
  • Made by Google 2026: This limited silicon-supply situation really sucks13 August 2026 - 05:08
  • Cheap and cheerful LMC555 RC PWM pulse generator12 August 2026 - 13:56
  • Record high wafer shipments. Can fabs keep pace?12 August 2026 - 07:51
IOE LOGO 2

Become a member

click here

Become a member

click here

Become a subscriber

click here

Become a sponsor

click here

© Copyright - The Institution of Electronics | Website by WHD Solutions
  • Link to LinkedIn
  • Link to Facebook
  • Link to X
Link to: 100-V Schottky rectifiers aid efficiency Link to: 100-V Schottky rectifiers aid efficiency 100-V Schottky rectifiers aid efficiency Link to: Aspinity strengthens AI-based automotive security Link to: Aspinity strengthens AI-based automotive security Aspinity strengthens AI-based automotive security
Scroll to top Scroll to top Scroll to top