GaN FETs serve as drop-in SiC replacements
Transphorm announced two SuperGaN FETS in 4-lead TO-247 packages, offering an original design option or alternative to 4-lead silicon or SiC devices. The TP65H035G4YS and TP65H050G4YS are both 650-V FETs with an on-resistance of 35 mΩ and 50-mΩ, respectively. Based on the company’s GaN-on-silicon substrate process, the devices are well-suited for high-volume manufacturing on silicon production lines.
The two SuperGaN FETs support power supplies at 1 kW and higher in such applications as data centers, renewables, and industrial equipment. Their 4-lead configuration provides a Kelvin source terminal to enhance switching efficiency. In a hard-switched synchronous boost converter, the 35-mΩ 4-lead FET reduced losses by 15% at 50 kHz and 27% at 100 kHz compared to a SiC MOSFET with comparable on-resistance.
The TO-247-4L devices offer the following core specifications:
The 50-mΩ TP65H050G4YS is available now. The 35-mΩ TP65H035G4YS is sampling and slated for release in Q1 2024.
Find more datasheets on products like this one at Datasheets.com, searchable by category, part #, description, manufacturer, and more.
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