600-V MOSFETs pack fast recovery diode
Two 600-V N-channel super-junction MOSFETs from Alpha & Omega incorporate a body diode for robustness and fast reverse recovery. Based on the company’s aMOS5 technology, the AOK095A60FD (TO-247) and AOTF125A60FDL (TO-220F) provide an on-resistance of 95 mΩ and 125 mΩ, respectively.
The power MOSFETs are optimized to meet the high-efficiency needs of DC/DC converters (LLC, PSFB, TTF) and solar inverters. aMOS5 FETs are engineered with a strong intrinsic body diode to handle hard commutation scenarios. This proves useful during abnormal conditions such as short circuits or start-up transients, where the freewheeling body diode operates in reverse recovery mode.
In tests conducted by Alpha & Omega engineers, the body diodes of the AOK095A60FD and AOTF125A60FDL survived high di/dt under abnormal system conditions, even at elevated junction temperatures of up to 150°C. Tests also showed that the devices’ turn-off energy is noticeably lower than competing devices, which contributes to higher efficiency under light or mid-load conditions.
Both parts are available now in production quantities, with a lead time of 16 weeks. The AOK095A60FD and AOTF125A60FDL cost $3.75 and $3.22 each, respectively, in lots of 1000 units.
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