GaN FET meets megawatt-scale demands
Renesas is sampling what it says is the industry’s first 650-V GaN FET with dual-side cooling for high-density power conversion in 800-V HVDC AI data centers. The TP65H020G4PLSGBD also has a 20-mΩ on-resistance that Renesas says is among the lowest in its class.
Unlike conventional top-side-cooled packages, the TP65H020G4PLSGBD dissipates heat from both the top and bottom, lowering top-side thermal impedance by 10%. Further, its 8×8-mm PQFN package reduces footprint by 57% compared with the 10×15-mm TOLT package. These features enable higher power density in space-constrained megawatt racks.
The D-mode FET is built on the Gen IV Plus GaN architecture for systems operating at up to 700 V. It targets the 800-V DC/DC intermediate-bus converter stage, which steps down to 48 V, 12 V, or 6 V, as well as the battery-backup and capacitor-bank stages of the sidecar power rack. The device can be driven with a standard silicon gate driver and is pin-to-pin compatible with E-mode GaN devices. Its higher threshold voltage of 4 V typical provides improved noise immunity.
Mass production of the TP65H020G4PLSGBD is planned for mid-2027.
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