GaN half-bridge simplifies 650-V power stages
MasterGaN6 from ST integrates two 650-V enhancement-mode GaN transistors with typical RDS(on) of 140 mΩ in a half-bridge configuration, delivering a compact, efficient power stage. This power system-in-package also integrates a high-voltage gate driver and linear regulators for both high-side and low-side supplies to further reduce external components.
As the second generation of the MasterGaN half-bridge family, MasterGaN6 adds dedicated fault and standby pins to enable enhanced system monitoring and power management. Integrated LDOs and a bootstrap diode ensure reliable, optimized gate driving for improved efficiency and performance in high-density power applications.
MasterGaN6 handles output currents up to 10 A, with an overall driver propagation delay of 45 ns and a minimum pulse width of 35 ns. Its 3.3-V to 15-V logic-compatible inputs feature hysteresis and an integrated pull-down for robust noise immunity. A comprehensive protection set includes cross-conduction prevention, thermal shutdown, and undervoltage lockout to ensure safe and reliable operation.
Prices for the MasterGaN6 half-bridge in a 9×9-mm QFN package start at $4.14 in lots of 1000 units.
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