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SiC modules boost power cycling performance

Wolfspeed’s YM 1200-V six-pack power modules deliver up to 3× the power cycling capability of comparable devices in the same industry-standard footprint. The company reports that the modules also provide 15% higher inverter current.

Built with Gen 4 SiC MOSFETs, the modules are suited for e-mobility propulsion systems, automotive traction inverters, and hybrid electric vehicles. Their YM package incorporates a direct-cooled pin fin baseplate, sintered die attach, hard epoxy encapsulant, and copper clip interconnects. An optimized power terminal layout minimizes package inductance, reducing overshoot voltage and lowering switching losses.

In addition to their 1200-V blocking voltage, YM module variants offer current ratings of 700 A, 540 A, and 390 A, with corresponding RDS(on) values at 25°C of 1.6 mΩ, 2.1 mΩ, and 3.1 mΩ. According to Wolfspeed, the modules achieve a 22% improvement in RDS(on) at 125°C over the previous generation and reduce turn-on energy by roughly 60% across operating temperatures. An integrated soft-body diode further cuts switching losses by 30% and VDS overshoot by 50% during reverse recovery compared to the prior generation.

The 1200‑V SiC six‑pack power modules are now available for customer sampling and will reach full distributor availability in early 2026.

Wolfspeed

The post SiC modules boost power cycling performance appeared first on EDN.

20 November 2025
http://institutionofelectronics.ac.uk/wp-content/uploads/2022/12/IOE_LOGO.png 0 0 whdsolutions http://institutionofelectronics.ac.uk/wp-content/uploads/2022/12/IOE_LOGO.png whdsolutions2025-11-20 17:45:062025-11-20 17:45:06SiC modules boost power cycling performance

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