600-V MOSFET enables efficient, reliable power conversion
The first device in AOS’ αMOS E2 high-voltage Super Junction MOSFET platform is the AOTL037V60DE2, a 600-V N-channel MOSFET. It offers high efficiency and power density for mid- to high-power applications such as servers and workstations, telecom rectifiers, solar inverters, motor drives, and other industrial power systems.
Optimized for soft-switching topologies, the AOTL037V60DE2 delivers low switching losses and is well suited for Totem Pole PFC, LLC and PSFB converters, as well as CrCM H-4 and cyclo-inverter applications. The device is available in a TOLL package and features a maximum RDS(on) of 37 mΩ.
AOS engineered the αMOS E2 high-voltage Super Junction MOSFET platform with a robust intrinsic body diode to handle hard commutation events, such as reverse recovery during short-circuits or start-up transients. Evaluations by AOS showed that the body diode can withstand a di/dt of 1300 A/µs under specific forward current conditions at a junction temperature of 150 °C. Testing also confirmed strong Avalanche Unclamped Inductive Switching (UIS) capability and a long Short-Circuit Withstanding Time (SCWT), supporting reliable operation under abnormal conditions.
The AOTL037V60DE2 is available in production quantities at a unit price of $5.58 for 1000-piece orders.
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