200-V MOSFETs cut conduction losses

Two devices have joined iDEAL Semiconductor’s SuperQ 200-V MOSFET portfolio, offering very low R_DS(on) in standard power packages. These two SuperQ devices are designed for demanding motor-drive applications that require high efficiency, robustness, and fault tolerance.

The iS20M5R5S1T achieves a maximum R_DS(on) of just 5.5 mΩ in the compact TOLL package, enabling higher power density and reduced conduction losses in space-constrained designs. Similarly, the iS20M6R3S1P delivers a maximum R_DS(on) of 6.3 mΩ in the rugged TO-220 package, providing high efficiency for applications that favor through-hole assembly, mechanical mounting, or direct heatsinking.

The new SuperQ MOSFETs feature high short-circuit withstand current and closely matched gate thresholds, with a variation of ±0.5 V, for easier paralleling. They are rated for 175 °C and can handle currents up to 151 A in the TOLL package and 172 A in the TO-220 package. Both devices are avalanche-rated and undergo 100% UIS testing in production.

In addition to motor drives, these MOSFETs are also suitable for switched-mode power supplies, secondary-side synchronous rectification, and other high-current industrial or battery-powered systems. 

The iS20M5R5S1T and iS20M6R3S1P are in volume production and available through iDEAL’s global distribution channels.

iDEAL Semiconductor 

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