Mitsubishi samples high-voltage IGBT modules
Mitsubishi announced that it has begun shipping samples of two new S1-Series high-voltage IGBT modules rated at 1.7 kV. These two components are useful for large industrial equipment, such as railcars and DC power transmitters. With proprietary IGBT devices and advanced insulation structures, the S1-Series modules enhance reliability, minimize power loss, and reduce thermal resistance, supporting more reliable and efficient operation of inverters in large industrial equipment.
The S1-Series incorporates Mitsubishi’s Relaxed Field of Cathode (RFC) diode, increasing the Reverse Recovery Safe Operating Area (RRSOA) by 2.2 times over previous models, improving inverter reliability. Additionally, an IGBT element with a Carrier Stored Trench Gate Bipolar Transistor (CSTBT) structure reduces power loss and thermal resistance, enabling more efficient inverter operation. The upgraded insulation structure boosts insulation voltage resistance to 6.0 kVRMS—1.5 times higher than earlier products—allowing more flexible insulation designs for compatibility with a broader range of inverter types.
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