Gate driver photocoupler simplifies SiC MOSFET control
Housed in a small SO8L package, Toshiba’s TLP5814H gate driver photocoupler provides an active Miller clamp for driving SiC MOSFETs. Its built-in clamp circuit directs Miller current from the gate to ground, preventing short circuits without requiring a negative voltage. This enhances system safety while reducing external circuitry for a more compact design.
The TLP5814H delivers a peak output current of +6.8 A/-4.8 A, with the Miller clamp providing a typical channel resistance of 0.69 Ω and a peak sinking current of +6.8 A. Its -40°C to +125°C operating range is achieved by enhancing the infrared LED’s optical output and optimizing the photodetector design for better optical coupling efficiency. This makes the device well-suited for industrial equipment with strict thermal requirements, such as PV inverters and uninterruptible power supplies.
Key specifications for the TLP5814H include:
The TLP5814H’s compact 5.85×10×2.1-mm package enhances layout flexibility while providing an 8.0-mm creepage distance for high-insulation applications.
Toshiba has begun volume shipments.
Toshiba Electronic Devices & Storage
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