Rad-hard gate driver enables GaN adoption
Infineon’s RIC70115 GaN HEMT gate driver provides the radiation hardness and long-term reliability required for satellite and space applications. Supporting both silicon FETs and GaN HEMTs in low-side and high-side configurations, the device helps ease the transition from silicon to GaN.
Operating over a temperature range of -55°C to +125°C, the RIC70115 is characterized for single-event effects up to a linear energy transfer (LET) of 81.9 MeV·cm²/mg and a total ionizing dose (TID) of up to 100 krad(Si). Its independent Miller clamp prevents parasitic-induced turn-on while maintaining switching speed, reducing switching losses. Truly differential input logic rejects common-mode noise and minimizes the effects of EMI and RFI.
An integrated low-dropout regulator generates a tightly regulated 4.8-V drive voltage from a 5-V or 12-V source, supporting a supply voltage range of 4.75 V to 15 V. The RIC70115 provides a 1.5-A source current and a 2.5-A sink current, with propagation delay matching of up to 2.9 ns.
The RIC70115 is offered in a hermetically sealed 16-pin LCC package or in die form.
The post Rad-hard gate driver enables GaN adoption appeared first on EDN.
