SiC diodes maintain stable, efficient switching
Nexperia’s 1200-V, 20-A SiC Schottky diodes contribute to high-efficiency power conversion in AI server infrastructure and solar inverters. The PSC20120J comes in a D2PAK Real-2-Pin (TO-263-2) surface-mount package, while the PSC20120L uses a TO-247 Real-2-Pin (TO-247-2) through-hole package. Both thermally stable plastic packages ensure reliable operation up to +175°C.
These Schottky diodes offer temperature-independent capacitive switching and virtually zero reverse recovery, resulting in a low figure of merit (QC×VF). Their switching performance remains consistent across varying current levels and switching speeds.
Built on a merged PiN Schottky (MPS) structure, the diodes also provide strong surge current handling, as shown by their high peak forward current (IFSM). This robustness reduces the need for external protection circuitry, helping engineers simplify designs, improve efficiency, and shrink system size in high-voltage, harsh-environment applications.
Use the product page links below to view datasheets and check availability for the PSC20120J and PSC20120L SiC Schottky diodes.
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