100-V MOSFETs cut on-resistance
Renesas 100-V N-channel MOSFETs leverage an improved wafer manufacturing process with split gate technology, reducing on-resistance (RDS(on)) by 30%. The REXFET-1 process also cuts total gate charge (Qg) by 10% and gate-to-drain charge (Qgd) by 40%, according to the company.
Designed for high-power applications, these MOSFETs provide high-current switching in motor control, battery management systems, power management, and charging. Typical end products include electric vehicles, e-bikes, charging stations, power tools, and uninterruptible power supplies.
Both the RBA300N10EANS and RBA300N10EHPF MOSFETs feature a standard gate drive voltage of 2.0 V to 4.0 V. Other key specifications include an RDS(on) of 1.5 mΩ, drain current (ID) of 340 A, Qg of 170 nC, and Qgd of 30 nC.
In addition to enhanced electrical characteristics, the RBA300N10EANS and RBA300N10EHPF MOSFETs are offered in TOLL and TOLG packages, respectively. These packages are pin-compatible with devices from other manufacturers and 50% smaller than conventional TO-263 packages. The TOLL package also has wettable flanks for optical inspection.
The RBA300N10EANS and RBA300N10EHPF MOSFETs are now available in production volumes. Renesas also offers a reference design and application note to help shorten design cycles.
Find more datasheets on products like this one at Datasheets.com, searchable by category, part #, description, manufacturer, and more.
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