100-V GaN transistors meet automotive standard
Infineon Technologies AG unveils its first gallium nitride (GaN) transistor family qualified to the Automotive Electronics Council (AEC) standard for automotive applications. The new CoolGaN automotive transistor 100-V G1 family, including high-voltage (HV) CoolGaN automotive transistors and bidirectional switches, meet AEC-Q101.
This supports Infineon’s commitment to provide automotive solutions from low-voltage infotainment systems addressed by the new 100-V GaN transistor to future HV product solutions in onboard chargers and traction inverters. “Our 100-V GaN auto transistor solutions and the upcoming portfolio extension into the high-voltage range are an important milestone in the development of energy-efficient and reliable power transistors for automotive applications,” said Johannes Schoiswohl, Infineon’s head of the GaN business line, in a statement.
The new devices include the IGC033S10S1Q CoolGaN automotive transistor 100 V G1 in a 3 × 5-mm PQFN package, and the IGB110S10S1Q CoolGaN transistor 100 V G1 in a 3 × 3-mm PQFN. The IGC033S10S1Q features an Rds(on) of 3.3 mΩ and the IGB110S10S1Q has an Rds(on) of 11 mΩ. Other features include dual-side cooling, no reverse recovery charge, and ultra-low figures of merit.
These GaN e-mode power transistors target automotive applications such as advanced driver assistance systems and new climate control and infotainment systems that require higher power and more efficient power conversion solutions. GaN power devices offer higher energy efficiency in a smaller form factor and lower system cost compared to silicon-based components, Infineon said.
The new family of 100-V CoolGaN transistors target applications such as zone control and main DC/DC converters, high-performance auxiliary systems, and Class D Audio amplifiers. Samples of the pre-production automotive-qualified product range are now available. Infineon will showcase its automotive GaN solutions at the OktoberTech Silicon Valley, October 16, 2025.
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