Page 21 - Spring 2024
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BREAKTHROUGH IN 2D


          MATERIAL TECHNOLOGY











          Researchers at the University of Manchester           “ To overcome these limitations we devised
          have achieved a breakthrough in 2D material           a hybrid stamp, comprising a flexible silicon
          science that is believed to have major                nitride membrane for mechanical support and
          implications for the future of electronics.           an ultrathin metal layer as a sticky ‘glue’ for
                                                                picking up the 2D crystals. Using the metal layer
          The technology involves the use of a fully            we can carefully pick up a single 2D material
          inorganic stamp in an ultra-high vacuum that has
                                                                and the sequentially ‘stamp’ its atomically flat
          enabled the precise assembly of van der Waals         lower surface onto additional crystals. The van
          heterostructures with up to eight individual layers.
                                                                der Waals forces at this perfect interface cause
          This has resulted in atomically clean interfaces      adherence of these crystals, enabling us to
          over large areas, significantly outperforming
                                                                construct flawless stacks of up to eight layers. “
          existing methods bringing the commercialisation
          of 2D material-based electronic devices closer to     The team has since scaled up this ultraclean
          reality.                                              transfer process so as to be able to handle
                                                                larger, gas-phase-grown materials, achieving
          The rigidity of the new stamp design dramatically     millimetre-scale areas, a crucial capability for
          reduced strain inhomogeneity in assembled
                                                                the scalability and potential application of such
          stacks and a tenfold decrease in local observation    materials in next-generation electronics.
          was observed at ‘twisted’ interfaces relative to
          current assemblies.                                   The next stage is to evaluate the effectiveness of
                                                                the method for wafer-scale transfer of 2D films.
          The new method provides a means of stacking
          individual 2D materials in specific sequences,        The University of Manchester has applied for
          potentially creating designer crystals with           a patent for this method and its associated
          unique hybrid properties. Previous techniques for     apparatus, and is looking for collaboration with
          transferring these layers relied on organic polymer   equipment manufacturers, semiconductor
          membranes which tended to create surface              foundries and electronic device manufacturers
          contamination of the 2D materials.                    focusing on 2D materials.
          Dr. Nick Clark is quoted as follows:                  Reference: West, P., Electronic Specifier, 1st. January



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