650-V SiC diode touts increased reliability

Nexperia’s PSC1065K SiC Schottky diode comes in a real-2-pin (R2P) TO-220-2 plastic package that enhances reliability in high-voltage applications at temperatures up to 175 °C. This industrial-grade device has a repetitive peak reverse voltage (VRRM) of 650 V, forward current (IF) of 10 A, and non-repetitive peak forward current (IFSM) as high as 440 A.

The merged PiN Schottky (MPS) structure of the PSC1065K adds robustness against surge currents and eliminates the need for additional protection circuitry. Additionally, the PSC1065K offers temperature-independent capacitive switching and zero forward and reverse recovery behavior. These features reduce system complexity and enable hardware designers to achieve higher efficiency with smaller form factors in rugged high-power applications.

Nexperia offers its 650-V, 10-A SiC Schottky diodes in four high-voltage compliant R2P packages with higher creepage distance. These R2P packages include DPAK, D2PAK, TO-247-2, and TO-220-2, designated the PSC1065-H, -J, -L, and –K, respectively. Applications for these devices include switched-mode power supplies, AC/DC and DC/DC converters, battery-charging infrastructure, uninterruptible power supplies, and photovoltaic inverters.

PSC1065K product page

Nexperia

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