ICs combine GaN power with high-frequency control

GaNSense control ICs from Navitas integrate a high-voltage GaN FET and a low-voltage silicon system controller in a single surface-mount package. Intended for fast-charging power systems, initial applications cover 20-W to 150-W smartphone, tablet, and laptop chargers; consumer and home appliance supplies; and auxiliary supplies in data center and 400-V EV systems.

The first GaNSense ICs include high-frequency quasi-resonant flybacks supporting QR, DCM, CCM, and multiple-frequency, hybrid-mode operations with frequencies up to 225 kHz. Devices are provided in a surface-mount QFN package (NV695x series) or as a chipset (NV9510x + NV61xx) for design flexibility. On the secondary side, integrated synchronous rectifier power ICs (NV97xx) achieve maximum efficiency at any load condition compared to conventional rectifiers.

GaNSense features, such as loss-less current sensing, HV start-up, frequency hopping, low standby power, and wide VDD input voltage, enable small, efficient, cool-running systems with fewer components and no RSENSE hot-spot. Built-in protection functions include 800-V transient voltage, 2-kV ESD, overvoltage, overcurrent, and overtemperature.

GaNSense product page

Navitas Semiconductor 

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